Abstract
In this paper, we report on first midwavelength infrared HgCdTe barrier detectors with a zero valence band offset grown by metal organic chemical vapor deposition on GaAs substrates. Investigated structures have the same cap-barrier structural unit, p+-B p , and N+ bottom contact layer, but a different n- and p-type absorption layers. Initial experiments indicate the influence of the barrier on electrical and optical performances of the devices. Both type of photodetectors exhibit dark current densities in the range \((2\div 3) \times 10^{-4}\) A/cm \(^{2}\) at 230 K and maximum responsivities of \(\sim 2\) A/W.
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