Abstract
Metal-organic chemical vapor deposition (MOCVD) was used to form laser heterostructures in the system of GaInAsP/GaInP/AlGaInP solid solutions. The design of the laser structure was chosen on the basis of the calculated band offsets at the heteroboundaries in the active region of the waveguide. A maximal optical power of 320 mW is attained at the output of the mesa-stripe diode laser with a stripe width of W=5 µm in continuous-wave mode at 780 nm.
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