Mobility Ratio as a Probe for Guiding Discovery of Thermoelectric Materials: The Case of Half-Heusler Phase ScNiSb1−xTex

Abstract

Analysis of bipolar thermal conductivity might be very useful in preliminary stages of thermoelectric materials discovery. Using its product---mobility ratio between electrons and holes---it is possible to choose the most promising compound from the series and pave the correct direction of doping. Current work presents positive verification of this approach for $\mathrm{Sc}\mathrm{Ni}\mathrm{Sb}$, which is anticipated to show superior mobility when tuned towards n-type behavior. In agreement with expectation, the mobility increases by an order of magnitude due to rising tellurium content in the ${\mathrm{Sc}\mathrm{Ni}\mathrm{Sb}}_{1\ensuremath{-}x}{\mathrm{Te}}_{x}$ series. The effect is most likely driven by change of the dominant charge carriers' scattering mechanism from ionized impurity influence to point defect and acoustic phonon interaction. Simultaneously, due to a highly anisotropic conduction band, the effective mass of the carriers rises towards the n-type regime. These two effects lead to an improved thermoelectric power factor of electron-doped samples, up to $40\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}{\mathrm{WK}}^{\ensuremath{-}2}\phantom{\rule{0.2em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$ at 740 K for ${\mathrm{Sc}\mathrm{Ni}\mathrm{Sb}}_{0.85}{\mathrm{Te}}_{0.15}$. Based on this result, we suggest n-type doping for other rare-earth-based half-Heusler compounds. Representatives of this group exhibit the smallest lattice thermal conductivity in the pristine form among any half-Heusler thermoelectrics, and are anticipated to show comparably good electrical properties to ScNiSb due to their high mobility ratio in favor of electrons.