Abstract
The mobility of the two-dimensional electron gas in GaAs-Alx Ga1−xAs heterostructures was studied systematically in ten samples with density from 1.33×1011 to 7.8×1011 cm−2 in the temperature range T=4.2–300 K. A theoretical calculation using the variational wave function was carried out for scattering by screened impurity ions, optical phonons, and acoustic phonons through deformation and piezoelectric couplings. Good quantitative agreement between theory and experiment was obtained with no adjustable parameters.
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