Abstract
We analyze low-temperature ultra-high–mobility data (μ⩽ 1.6×106 cm2 /Vs) obtained for the two-dimensional electron gas in Si/SiGe heterostructures with Al2O3 as the gate oxide. We find that charged impurities of density Nid=5.5×1012 cm−2, located at the SiGe/Al2O3 interface at a distance d=1500 Å from the electron gas, are important for the mobility. A metal-insulator transition is predicted at low electron density (near 2×1010 cm−2). We discuss the importance of many-body effects (exchange and correlation) for the mobility for the non-polarized and the spin-polarized electron gases. Suggestions are made to increase the mobility in such structures.
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