Abstract
The temperature dependences of the inverse mobility of nondegenerate two-dimensional electrons in scattering by impurity ions in heterostructures with a narrow spacer have been investigated using the Al x Ga1 − x As/GaAs heterostructure as an example. Correlations in the arrangement of impurity ions have been taken into account in the model of hard spheres on a plane. The influence of the form of the structure factor in the electron mobility has been considered.
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