Mobility of a two-dimensional electron gas in the AlGaN/GaN heterostructure: simulation and analysis

Abstract

At temperatures higher than the room temperature, a two-dimensional electron gas (2DEG) formed at the AlGaN/GaN heterointerface can be characterized by the three dominant scattering mechanisms: acoustic deformation potential, polar acoustic phonon and polar optical phonon scatterings. An analytical model describing the 2DEG mobility limited by these scattering mechanisms as a function of the carrier concentration and the temperature was developed and integrated into a device simulator package using a C language interpreter. The model should be useful for heterostructure device simulators such as Blaze.