Abstract
This paper presents two separate carrier-mobility models for the I- V characteristics of buried-channel MOSFETs. One model considers oxide-semiconductor interface scattering for carrier motion in the surface accumulation layer; the other model considers the scattering of carrier motion within the finite thickness of the neutral buried channel. Based on these two carrier-mobility models, the I- V characteristic model of buried-channel MOSFETs is derived analytically without considering the small-geometry effects. Comparisons between the developed I- V characteristic model and the experimental results of the fabricated buried-channel MOSFETs have been made. It has been shown that the mobility models developed enable us to accurately simulate the I- V characteristics of buried-channel MOSFETs operated over wide ranges of gate-source and back-gate biases.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
