Abstract
A detailed numerical description of the free-electron concentration and mobility due to charged dislocation lines is presented. The scattering at dislocations is numerically analyzed in addition to the other scattering mechanisms and the transverse mobility is calculated by the energy averaging technique. Furthermore, the effect on mobility from an unintentional bulk acceptor concentration is calculated at room temperature. Specifically the calculated mobility is presented as a function of the combined effect from free electrons ${(10}^{15}--{10}^{19}{\mathrm{cm}}^{\ensuremath{-}3}),$ dislocations $(5\ifmmode\times\else\texttimes\fi{}{10}^{8}--{10}^{12}{\mathrm{cm}}^{\ensuremath{-}2}),$ and bulk acceptors ${(10}^{15}--{10}^{19}{\mathrm{cm}}^{\ensuremath{-}3}).$ Also compensation from 0 to 100% is considered. Results are compared with experimental mobility data. Most mobility results in epitaxially grown GaN layers intended for optical and electronic device structures are limited by $\ensuremath{\sim}{10}^{10}{\mathrm{cm}}^{\ensuremath{-}2}$ dislocations and a compensation which is typically 30%--60%.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
