Abstract
High-temperature annealing, assisted by the in-plane application of a high-voltage electric field, was used to form thin films of poly(3-hexylthiophene) (P3HT), boasting increased crystallite size and enhanced charge mobility. In-plane crystallite growth and surface morphology were characterized by atomic force microscopy. X-ray diffraction analyses showed that the application of an electric field decreased film thickness and increased the dimensions of the crystalline domains by 25.6% during subsequent high-temperature annealing. Crystalline domains were 13.4% larger, and exhibited 70% higher mobility, than those obtained with thermal annealing in the absence of an electric field.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
