Mobility exceeding 100 000 cm2/V s in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum

Abstract

The two-dimensional electron gas residing in shallow InAs quantum wells coupled to epitaxial aluminum is a widely utilized platform for exploration of topological superconductivity. Strong spin-orbit coupling, a large effective $g$ factor, and control over proximity-induced superconductivity are important attributes. Disorder in shallow semiconductor structures plays a crucial role for the stability of putative topological phases in hybrid structures. We report on the transport properties of 2DEGs residing 10 nm below the surface in shallow InAs quantum wells in which mobility may exceed 100 000 ${\mathrm{cm}}^{2}/\mathrm{V}$ s at 2DEG density ${n}_{2\mathrm{DEG}}\ensuremath{\le}1\ifmmode\times\else\texttimes\fi{}{10}^{12}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$ at low temperature.