Abstract
The strained Si modulation-doped (MOD) structure formed on the strain-relaxed SiGe buffer layer planarized by chemical mechanical polishing (CMP) was found to show significant mobility enhancement. The enhancement reaches a factor of 6 at low temperatures. The backgate dependence as well as temperature dependence of the transport properties of the MOD structure were investigated, and it was suggested that CMP drastically reduced the roughness scattering and increased the mobility of two-dimensional electron gas in the strained Si.
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