Abstract
Electron irradiations of PbSnTe at 10 °K are found to produce mobility increases in n-type material, while mobility decreases are observed in p-type material. This behavior is shown to be directly related to the carrier addition which occurs during irradiation in n-type samples and the carrier removal which occurs in p-type samples, and is also shown to be dependent on the carrier degeneracy and heavily compensated state of the samples.
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