Abstract
We proposed solvent-free cross-linked ion gel polymer as a high-κ gate dielectric composed with polyurethane terminated with acrylate functional group and ionic liquids (1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) through ultra violet curing (UV-cured IL-PU). Free-standing UV-cured IL-PUs were applied as gate insulator by conformally contacting on the amorphous indium gallium zinc oxide side-gate structure thin film transistor with a simple ex situ method. The device shows a dramatic improvement of electrical performances even under low operating voltage conditions; on/off ratio ∼104, field effect mobility at linear region 47.79 ± 17.65 cm2 V−1 s−1, sub-threshold swing 145.54 ± 16.65 mV decade−1 at VDS = 0.1 V and VGS sweep from −3 to 2 V.
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