Abstract
We present mobility and charge density tuning for metalorganic chemical vapor deposition (MOCVD)-grown double-doped enhancement-mode (E-mode) pseudomorphic high-electron-mobility transistors (PHEMTs) by varying the supplier layer doping level and spacer layer thickness. From the resolvable Pendellosung oscillation in double-crystal X-ray diffraction measurements and a pronounced two-dimensional electron-gas peak in capacitance–voltage (C–V) analyses, good epitaxial wafers are obtained by MOCVD. The 1-µm-gate-length E-mode PHEMT device exhibits a good pinch-off characteristic with a threshold voltage of 0.025 V and a maximum transconductance of 203 mS/mm. The dependences of the pinch-off characteristic in C–V measurement on sheet carrier concentration and spacer layer thickness for E-mode PHEMT application is also described in detail.
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