Abstract

The effect of mobile space charge in the depletion layer of 4H SiC p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> nn <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> IMPATT diode has been investigated through computer simulation method. The simulation is based on drift-diffusion model to study DC properties of the device at different bias current densities. The device is designed to operate at millimeter wave frequencies. It is observed that a maximum DC to microwave conversion efficiency of 22.82% is obtained at a bias current density of 4.4times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> A.m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The DC to microwave conversion efficiency of Read and Quasi Read High-low SDR diodes has also been estimated and compared with that of flat profile p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> nn <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> diode at the same bias current density of 4.4times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> A.m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

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