Abstract
Molybdenum nitride coatings on molybdenum, from a direct reaction of molybdenum with ammonia, are used to improve the gate electrode properties of Mo gate self-aligned MOSFET's. A Mo <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> N double-layer gate shows resistance against oxidation and processing reagents, and improved ion-implantation masking. The work function of the double-layer film was determined to be 4.69 ± 0.03 eV, which is independent of the nitride thickness and annealing conditions. The projected range of boron implantation is smaller in Mo <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> N than in Mo. A Mo <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> N coating of 870 Å over 2130- Å Mo masks up to 60-keV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> B and 120-keV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">75</sup> As. The implantation study covers the energy range from 15 to 70 keV for boron and from 40 to 160 keV for arsenic.
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