Abstract
We investigate material properties in Mo x Si1−x thin films with the goal of optimization for single-photon detection from UV to mid-IR wavelengths. Saturated internal detection efficiency appears to be related to film structure for this material. We demonstrate nanometer-wide meander devices with saturated internal efficiency at 370 nm wavelength and 3.4 K operation temperature. By reducing the film thickness in the optimized material, we demonstrate saturated internal detection efficiency at 1550 nm wavelength and 1 K operation temperature for micron-wide meander shaped single-photon detectors with wire widths up to 2.0 μm and active areas up to 362 × 362 μm2.
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