Abstract
Based on a series of Mössbauer spectroscopic investigations on Fe impurities in p-type and n-type Si materials, we propose a new model for Fe impurities in Si matrix, consisting not only of interstitial Fe, but also substitutional Fe atoms with different charge states. Mössbauer spectroscopy enables us to observe directly these components which transform each other by changing external conditions such as under light illumination, under external voltage, and also under external stress. This means that not only interstitial Fe impurities, but also substitutional Fe impurities appear to be a source for producing “electrically active Fe impurities” in Si materials.
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