Abstract

Mo:BiVO4 nanoparticles were employed as an optical modulator in a Q-switched all-solid-state Tm:YAP laser for the first time. The nonlinear optical parameters of Mo:BiVO4 nanoparticles in the 2-μm region were characterized by measuring nonlinear transmission. Saturation intensity was 718 MW/cm2, and the modulation depth was 12.3%. A stable pulse sequence was acquired with a 70.08 kHz maximum repetition rate and an 821 ns pulse width. The maximum output average power was 153 mW, corresponding to 2.18 μJ single pulse energy and 2.67 W peak power. Although the response wavelength of Mo:BiVO4 is in visible light region, our experimental results demonstrates that a saturable absorption effect for wavelengths much longer than visible light (2 μm wavelength) is still possible due to sub-bandgap absorption. Therefore, we experimentally proved that Mo:BiVO4 nanoparticles are a great candidate for use as an optical modulator of a 2-μm pulsed laser.

Highlights

  • Mo:BiVO4 nanoparticles were employed as an optical modulator in a Q-switched all-solidstate Tm:YAP laser for the first time

  • The response wavelength of Mo:BiVO4 is in the visible light region, the saturable absorption effect for wavelengths that are longer than visible light is possible due to sub-bandgap absorption, which could be attributed to boundary effects, edges, and defects

  • 2-μm region were characterized by measuring nonlinear transmission

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Summary

Introduction

Mo:BiVO4 nanoparticles were employed as an optical modulator in a Q-switched all-solidstate Tm:YAP laser for the first time. We experimentally proved that Mo:BiVO4 nanoparticles are a great candidate for use as an optical modulator of a 2-μm pulsed laser. Semiconductor-based optical modulators in a pulsed laser field have been developed for a few decades. This type of optical modulators started from semiconductor saturable absorber mirrors (SESAMs), which were fabricated by InGaAs/GaAs or InGaAs/GaSb multiple-quantum-well layers and extensively utilized to generate short pulses in the spectral region from near-infrared (IR) to mid-IR wavelengths [1,2,3,4]. Members of the II–VI group, such as ZnO, CdS, and especially ZnO NPs, have a short recovery time of

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