Abstract
The MBE processes were performed in order to form the MnSb inclusions. Two kinds of substrates (GaSb and GaAs) as well as growth temperatures (450 and 520 °C) were examined. SEM imaging was performed to determine the shape and size of formed inclusions. In all the samples the inclusions of few hundred nm were formed. Their shapes depended strongly on the type of substrate while the size slightly increases with the growth temperature. The X-ray absorption techniques were used to monitor the local structure around Mn atoms and confirmed that the neighborhood of Mn atoms in the layers was close to that of the MnSb reference powder. We succeed in the formation of the GaSb layers with Mn assembled only into MnSb inclusions on both types of substrates: GaAs(1 1 1)A and GaSb(1 0 0). However, in case of the GaAs(1 1 1)A substrates, the atomic order around Mn atoms in MnSb inclusions is less perfect than in case of the GaSb(1 0 0) substrates.
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