Abstract
Sol-gel technique was used to fabricate CdO and Mn doped CdO solutions which were used to produce thin films. Undoped and 0.2% Mn doped, 6% Mn doped, and 10% Mn doped solutions were spin coated on Si wafers to fabricate photodiodes. Conductance – voltage (G - V) measurements were performed. Mn doping enhances the conductance properties of the CdO diodes. Increased conductance characteristics were obtained with increasing AC signal frequency. Corrective conductance – voltage (Gadj – V) graphs were obtained using conductance voltage graphs. Increased corrective conductance (Gadj) values were obtained with increasing AC signal frequency. Using corrective conductance – voltage (Gadj – V) and conductance – voltage (G - V) data density of interface states (Dit) values of the diodes were calculated. Different density of state values were obtained for the different photodiode. Density of state values were found to increase with increased Mn doping.
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