Abstract
Mn impurity energy levels were used as a reference level to determine the band discontinuity in AlxGa1−xAs/GaAs heterojunction. The concentration of Mn was 0.1 atm % in LPE growen AlxGa1−xAs epilayer. The x in AlxGa1−xAs was determined using photoluminescence and x-ray photoelectron spectroscopy techniques.The photoluminescence measurements showed that the donnor to acceptor pair emission related to Mn impurity was linearly varied in x<0.4 region in AlxGa1−xAs, But x>0.4 region we observed the internal transition of Mn impurity. Using donnor to acceptor pair emission, We calculated the binding energy of Mn acceptor. Also we obtained the valence band discontinuity is 0.26 ΔEg in AlxGa1−xAs/GaAs.
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