Abstract
The possibility of Mn doping in half-Heusler semiconductors (CoTiSb, FeVSb, NiTiSn, and NiZrSn) is reported. Mn-added polycrystalline ingots of these semiconductors were prepared by arc melting. Microstructural properties of these ingots indicate that the solubility limit of Mn in the half-Heusler phase is confined to a relatively limited range, that is, 0% for CoTiSb and FeVSb, 1% for NiTiSn, and 2% for NiZrSn. The electrical resistivity of polycrystalline NiZr0.98Mn0.02Sn indicates semiconducting temperature dependence with a transport gap of 84 meV.
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