Abstract
The 3d electronic states of transition-metal Mn dopants in Ga 1 − x Mn x N have been investigated by Mn L -edge X-ray absorption spectroscopy (XAS) measurements. Through the XAS analysis, the valence of the Mn ions is determined. With the increase of doping concentration, the integrated intensities of L 2 , 3 vary not monotonously, but increase first and then decrease. The relationship between the Mn doping concentration and the degree of p–d hybridization is discussed.
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