Abstract
Multiferroic materials are widely used in microelectronics because they are sensitive to elastic, magnetic, and electric fields and there is an intrinsic coupling between them. In particular, transition metal-doped BaTiO3 is considered as a viable multiferroic because of the simultaneous presence of ferroelectricity and magnetism. In this work, we study the electrical and thermal properties of Mn-doped BaTiO3 ceramics that can be used for multicaloric applications. We found that Mn doping leads to the broadening and shifting of the phase transition accompanied with simultaneous decrease of latent heat and entropy. Mn doping causes a decrease in the bulk resistivity while contact resistance remains intact. Doped ceramics can withstand high electric fields (up to 40 kV/cm) and exhibit linear I-V characteristics followed by the Schottky limited current in contrast to earlier observations. As such, these ceramics are promising for multicaloric applications.
Highlights
In the last decade, there has been a revival of interest in the study of multiferroics [1,2], which have a great potential for the development of magnetoelectric [3], magnetooptic [4] and multicaloric [5] devices for solid-state cooling
The grain size of the ceramics was in the range 0.1–1 μm in BTO+10Mn samples, with a smaller average size, observed for BTO+5Mn
We studied electrical and thermal properties of heavily Mn-doped BaTiO3 ceramics that is intended for further use in multicaloric applications
Summary
There has been a revival of interest in the study of multiferroics [1,2], which have a great potential for the development of magnetoelectric [3], magnetooptic [4] and multicaloric [5] devices for solid-state cooling. Strong coupling between ferroelectric and magnetic order parameters in these materials, for which external magnetic field induces a change of the ferroelectric characteristics, and electric field generates a change in magnetization, would allow development of a wide range of technological innovations, including memory media with ferroelectric writing and magnetic reading, sensors of magnetic field, energy harvesting devices and solid-state refrigerators. One way to increase magnetoelectric coupling is doping of ferroelectric antiferromagnetic perovskites such as BiFeO3 with both A- and B-site impurities that either induce magnetism via exchange interaction or strongly distort the antiferromagnetic state, so as Materials 2019, 12, 3592; doi:10.3390/ma12213592 www.mdpi.com/journal/materials. For diamagnetic A-site doped BiFeO3 , spontaneous magnetization has been shown to significantly increase [11,12] The highest values of the spontaneous magnetization have been observed for the rare-earth-doped bismuth ferrite [9,10], in which strong contribution from magnetic moments of the rare-earth ions to the net magnetization takes place.
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