Abstract
We have investigated the initial growth of Mn on GaAs(0 0 1)-c(4×4)α reconstructed surfaces at a substrate temperature of 320 °C using scanning-tunneling-microscopy. Up to the nominal deposition of 2 atomic layers of Mn, Mn grows on GaAs(0 0 1)-c(4×4)α reconstructed surfaces by the mechanism of double-layer formation and maintains a zincblende-type structure.
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