Abstract
Present paper reports design and measurement results of a 10W monolithic microwave integrated circuit (MMIC) transmit/ receive (T/R) switch with integrated low noise amplifier (LNA) realized using low noise, 0.25-μm GaAs pHEMT process and the measured transmit loss, noise figure (NF) and receive path gain are 1.0 dB, 2.5 dB and 5.6 dB respectively over 9.3-9.9 GHz. Also presented are the design procedure, analysis and layout level electromagnetic and co-simulation of a 200W pulsed power handling capability T/R switch with integrated LNA using 0.25-μm GaN pHEMT process over 3.1-3.3 GHz, having 45 dB isolation, 2.6 dB NF and 20 dB gain.
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