Abstract
This paper covers a few Monolithic Microwave Integrated Circuit (MMIC) design using the Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistor (p-HEMT) technology to be used in Local Multipoint Distribution Service (LMDS) system. Three different sections describe in brief the design approach and methodology involved in each RF circuit design especially in stabilizing circuitry and meeting the small and large signal specifications.
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