Abstract

It is reported that focused ion beam (FIB) techniques have been successfully applied to optimization of an X-band single stage MMIC (monolithic microwave integrated circuit) amplifier. Modification of MMIC components has been performed by etching of circuit patterns and depositing tungsten films. RF performance of the MMIC has been adjusted to the designed one without any further wafer process. It shows that these techniques are promising to develop MMICs. >

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