Abstract
A novel GaAs monolithic microwave integrated circuit (MMIC) active filter structure based on the lumped and transversal technique is proposed for operation in the X-band. This new structure includes a tuned amplifier as transversal element of the filter in order to improve the band-edge rejection. A design example of a bandpass filter centered at 7.5 GHz with 2 dB passband ripple and 30 dB rejection at 1 GHz apart from passband edges is presented in terms of computer simulations and layout. The simulated results demonstrate its superior performance when compared with the traditional lumped and transversal technique.
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