Abstract

Multi- layer graphene nanoribbon is emerging as a potential candidate for deep-nanometer interconnects due to its superior conductivity and current carrying capabilities. MLGNR showed superior performance over SLGNR for global interconnects. Also multi-gate devices such as FinFETs are the most promising building blocks in sub-micron technology. This paper combines these recent technologies of interconnects and devices and provides the analysis of delay and power performance of the combination. The driver-interconnect- load (DIL) system engaging FinFET driver with MLGNR interconnect is used for analyzing the performance.

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