Abstract

Silicon Carbide (SiC) power device possesses attractive features, such as high breakdown voltage, high‐speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this paper, we report the effect of temperature on the transient characteristics of 4H‐SiC DMOSFETs. By rising temperature, switching time also increase, primarily due to the lowered carrier lifetime in the N‐epi layer. It is found that improvement of switching speed in 4H‐SiC DMOSFETs is essential to reduce the on‐resistance (Ron). Therefore, accurate modeling of the operating conditions are essential for the optimizatin of superior switching performance.

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