Abstract
During the past 5 years numerous mixed signal circuits have been designed, processed, and characterized based on our 0.2 /spl mu/m gate length AlGaAs/GaAs/AlGaAs E/D quantum well HEMT technology. Utilizing the inherent advantages of this material system, optical, analogue, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gbit/s optoelectronic data transmission system, PLL circuits for 15 GHz and 34 GHz, and a 35 GHz phase shifter for phased array antenna applications.
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