Abstract
The present study examined the influence of annealing temperature on structural, morphological, electrical, and optical properties of thermally evaporated tin sulfide (SnS) thin films. The annealing of the prepared thin films has been carried out in the ambient atmosphere at a temperature between 100 and 300 °C. Structural, Optical, and compositional investigation has been performed using various characterization techniques. The X-ray diffraction pattern exhibits the mixed phase of SnS-SnO2 for the annealed films, ascribed to the reaction of SnS with atmospheric oxygen. A band gap in the 1.7–1.94 eV range was estimated from the Tauc-plots for all the films under investigation. The stoichiometric composition ratio of Sn/S=1.0 was obtained for the as-evaporated films. However, it deviates from the air-annealed SnS thin films. The air-annealed SnS thin films exhibit resistivity, carrier concentration and mobility in the range of 5.03–17.7 Ω-cm, 1.48 × 1018 – 2.18 × 1018 cm−3, and 0.04–1.05 cm2/V-s, respectively. The acquired results from this study elucidate the phase conversion of SnS thin films annealed in an ambient atmosphere. The current study aims to find an optimal absorber layer to enhance photovoltaic device performance.
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