Abstract
We report here a study performed on MOSFET (Metal Oxide Semiconductor Field Effect Transistor) sensor for the measurement of accumulated doses from a mixed field radiations (especially gamma and fast neutron) environment such as nuclear detonation. The MOSFET sensor has shown its capability towards fast neutron dose measurement along with its well known gamma dose measurement capabilities. The study results are helpful in the establishment of MOSFET as a Personal Dosimeter for mixed field radiation. The measured sensitivities for gamma and fast neutron dose measurements are 1.1 mV/cGy and 0.6 mV/cGy respectively.
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