Abstract
The power conversion efficiency of cryogenically cooled InP-based diode lasers is limited by excess electrical voltage caused by the freeze-out of holes at low temperature. Hall-effect measurements are performed to determine the ionization energy of Zn in bulk InP and In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.90</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.10</sub> As <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.24</sub> P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.76</sub> (the values obtained are 18.6 and 11.6 meV, respectively). A laser design with an InGaAsP p-cladding layer shows a large decrease in the 77 K voltage defect relative to a more traditional InP design. Peak conversion efficiency of 73% and >10-W maximum power are reported at 1493 nm from a single 200-μm stripe laser operating at 77 K.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
