Abstract

A phosphomolybdic acid (PMA)‐doped poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hole transporting layer (HTL) is developed to effectively optimize the anode interface of inverted organic photovoltaic (OPV) devices. Since a deep‐lying work function of HTL is in favor of reducing the interfacial barrier for hole transporting, superior power conversion efficiencies (PCE) of 9.22% and 10.8% are achieved in fullerene‐based and nonfullerene‐based devices in inverted architecture. Thus‐prepared OPV devices also exhibit excellent photostability and retain 85% of the initial PCE after 1000 h of irradiation under 100 mW cm−2 irradiation. The overall result suggests the practicability and mitigation of efficiency loss when replacing the conventional PEDOT:PSS with PMA‐doped PEDOT:PSS as HTL to fabricate highly efficient, inverted OPV devices.

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