Abstract
Data storage in the Industrial Internet-of-Things scenario presents critical aspects related to the necessity of bringing storage devices closer to the point where data are captured. Concerns on storage temperature are to be considered especially when Solid State Drives (SSD) based on 3D NAND Flash technology are part of edge gateway architectures. Indeed, self-heating effects caused by oppressive storage demands combined with harsh environmental conditions call for proper handling at multiple abstraction levels to minimize severe performance slow downs and reliability threats. In this work, with the help of a SSD co-simulation environment that is stimulated within a realistic Industrial Internet-of-Things (IIoT) workload, we explore a methodology orthogonal to performance throttling that can be applied in synergy with the operating system of the host. Results evidenced that by leveraging on the SSD micro-architectural parameters of the queuing system it is possible to reduce the Input/Output operations Per Second (IOPS) penalty due to temperature protection mechanisms with minimum effort by the system. The methodology presented in this work opens further optimization tasks and algorithmic refinements for SSD and system designers not only in the IIoT market segment, but generally in all areas where storage power consumption is a concern.
Highlights
The new industrial revolution, mainly fueled by the Internet-of-Things (IoT) paradigm has forced many factories to deal with the issue of data storage
To the best of our knowledge, we carry this activity for the first time considering the Industrial IoT world (IIoT) scenario peculiarities; We provide a methodology orthogonal to the state-of-the-art throttling to guard-band self-heating of the drive assuming a monitoring of its internal temperature
The Solid State Drives (SSD) controller that is an Application Specific Integrated Circuit (ASIC) whose power consumption linearly increase with time according to the amount of data to process and manage; The 3D NAND Flash memory sub-system whose power contribution depends on the amount of parallel accessed channels and on the operation performed; The DRAM buffer used as a cache or as a temporary storage for FTL-metadata structures; Other ICs and passive components for power supply and temperature control
Summary
The new industrial revolution, mainly fueled by the Internet-of-Things (IoT) paradigm has forced many factories to deal with the issue of data storage. The continuous race for higher storage density that involves the IIoT world as well has further exacerbated temperature-related issues caused either by the adoption of multi-bits per cell paradigm or by the transition from planar (2D) NAND Flash to vertically integrated 3D NAND Flash technology [12] This has exposed how acting only at a physical or algorithmic abstraction level could be insufficient, calling for an exploration of solutions that span from the SSD micro-architectural parameters to the characterization of 3D NAND Flash technology peculiarities [13]. We address this challenge by exploring a proper thermal-aware methodology that mitigates the impact of the self-heating effect in SSDs for IIoT edge gateway architectures Such a method considers the power and performance figures of a Triple Level Cell 3D NAND Flash technology [12] integrated in the drive and exploits the synergy with the operating system of the host to dynamically vary the parameters of a SSD’s queuing system in order to minimize performance drop-outs caused by throttling events. The adaptation of the benchmark results to the IIoT scenario conferring solidness to our assumptions
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