Abstract
AbstractA new physics based transport and charge model for long channel GaN HEMTs is proposed. The model is based on the concept of virtual source (VS) carrier transport (A. Khakifirooz et al., IEEE‐TED 56(8), 1674 (2009) [1]) and is extended to drift diffusion regime. The model is fully scalable from non‐velocity saturation to velocity saturation regime. In addition, non‐linear access regions are modeled as implicit‐gated transistors. Self‐heating effects and self‐consistent charge models are included. The model is validated against state of the art industry devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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