Abstract
Metastable rhombohedral-structured indium tin oxide (rh-ITO) epitaxial films were successfully grown on c-, a-, m-, and r-plane α-Al2O3 substrates with α-Fe2O3 buffer layers using mist chemical vapor deposition. X-ray diffraction measurements showed the growth of rh-ITO epitaxial films with various orientations on the correspondingly oriented substrates with buffer layers. The electron carrier concentrations of the rh-ITO reached (3.8–5.1) × 1020 cm–3 with Sn impurity doping. Optical transmittance tests showed that the rh-ITO thin films were highly transparent to visible light. The results suggested that the rh-ITO thin films featured both high electrical conductivity and high optical transparency. The band gaps and band gap shifts by the Burstein–Moss effect on the various α-Al2O3 substrates showed different orientation-dependent values. The demonstrated epitaxial rh-ITO thin films with various orientations permit the physical characterization of rare rh-ITO thin films.
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