Mist Chemical Vapor Deposition Growth of α‐In2O3 Films Using Indium Oxide Powder as Source Precursor

Abstract

The epitaxial growth of α‐In2O3 films by mist chemical vapor deposition (mist CVD) using In2O3 powder as a source precursor is conducted. To prepare the source precursor solution, the In2O3 powder is first dissolved in HCl aqueous solution. The concentrations of HCl in the source precursor solution are then adjusted to be between 0.82 and 2.3 mol L−1 by adding deionized water. An enhancement in α‐In2O3 phase formation and increases in its grain size and thickness are observed with increasing HCl concentration. A pure α‐In2O3 film grown using a source precursor solution with 1.2 mol L−1 of HCl shows a residual electron concentration of 8.4 × 1017 cm−3 and electron Hall mobility of 216 cm2 V−1s−1.