Abstract
The results of investigations of boron incorporation into the delta layers of diamond, depending on the misorientation angle of the substrate surface relative to the crystallographic plane (001) are presented. Experiments are carried out on specially prepared substrates having several sectors with different miscut angles. The use of such substrates allowed to obtain data on the influence of the miscut angle in single growth process. The influence of the in‐plane orientation of miscut on the boron concentration in the delta layer and on the growth rate is also studied. When studying the incorporation of boron into delta layers, special attention is paid to the investigation of the surface of grown structures. It is found that the use of substrates with small miscut angles leads to formation of pyramidal hillock defects on the surface.
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