Mismatch dislocation dangling bond distributions at zinc blende and wurtzite interfaces

Abstract

The dangling bond structures for the ideal mismatch dislocations in zinc blende films growing on (001), (110), and (111) and wurtzite films growing on (0001), (112̄0), and (101̄0) oriented substrates are described. Where possible, the ideal dislocation structure is compared to the experimentally observed structure. The crystallographic structure of the (1/6)[1̄21̄](111) and (1/6)[2̄11](111) partial dislocations which together form the (1/2)[1̄10](111) 60 ° dislocation, and the wurtzite–zinc blende interface across the (001)/(3̄034), (110)/(303̄8), and (111)/(0001) interfaces are described. It is suggested that deciphering the electronic properties of the (1/2)[1̄10](111)≡(1/3)[1̄21̄0](0001) 60 ° dislocation dangling bonds would be more straightforward in wurtzite films since there are no intersecting slip planes, and the dislocation does not decompose into partials. Also, a number of experiments are described which could help in the understanding of the different electronic effects produced by the different types of dangling bond configurations.