Abstract
Misfit stress relaxation phenomena were investigated in InGaAs-GaAsP strained-layer superlattice layers as a function of period thickness using x-ray diffraction topography and electron-beam-induced current techniques. By controlling the thickness of the individual layer, as well as the total thickness of an InGaAs/GaAsP strained-layer superlattice, we have achieved a defect density reduction in GaAs epilayers grown on GaAs substrates. Several strained-layer superlattice buffer layers whose period thickness varied from 80 to 120 nm have been studied.
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