Abstract
A typical example of low misfit quaternary heterojunction Ga 0.7Al 0.3As 1- y P y /GaAs has been characterized by several X-ray techniques. The sources, propagation conditions and Burgers vectors of misfit dislocations have been identified by use of synchrotron radiation X-ray topography. Most of the dislocations are of 60° type, a few edge dislocations were found to result from reactions.
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