Abstract

It was found, that Metal Insulator Semiconductor Field Effect (MIS-FE) sensors with structures Pd–Si3N4–SiO2–Si and Pd–Ta2O5–SiO2–Si have sufficient concentration resolution to H2S gas and acceptable response time in mixture of H2S gas with air. Results of MIS-FE gas sensor operation in periodic regime are presented and allow us to be sure, that low detection level of H2S for MIS-FE sensor with Ta2O5–SiO2 insulator is of about 5 ppb.

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