Abstract
In a previous study, we reported a highly efficient AlGaInP light-emitting diode (LED) with a Au/AuBe/SiO/sub 2//Si mirror substrate (MS) fabricated by wafer bonding, where a planar electrode structure is used. In view of the more efficient epilayer area utilized, AlGaInP/mirror/barrier/Si LEDs with vertical electrodes are proposed in this work. A variety of barrier layers (Pt/Ti, TaN/Ta, and TiN/Ti) have been incorporated into the mirror structure. The quality of the Au/AuBe mirror after bonding is known to be a key issue in obtaining high performance MS-LEDs. The large-area AlGaInP emitters (1.2 /spl times/ 1.2 mm/sup 2/) show that its luminous intensity and output power can reach 6 candelas and 81 mW under an injection current of 1 A and 300 mA, respectively. The dominant wavelength shifts /spl sim/5 nm under an injection current from 20 mA to 1 A. Based on these results, it can be concluded that the wafer-bonded AlGaInP epilayers with mirror substrates have high potential in high-brightness, high-power and large-area LED applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
