Abstract
In this study, leaf-like one-dimensional InAs nanostructures were grown by the metal–organic chemical vapor deposition method. Detailed structural characterization suggests that the nanoleaves contain relatively low-energy {122} or {133} mirror twins acting as their midribs and narrow sections connecting the nanoleaves and their underlying bases as petioles. Importantly, the mirror twins lead to identical lateral growth of the twinned structures in terms of crystallography and polarity, which is essential for the formation of lateral symmetrical nanoleaves. It has been found that the formation of nanoleaves is driven by catalyst energy minimization. This study provides a biomimic of leaf found in nature by fabricating a semiconductor nanoleaf.
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