Abstract
We present a comprehensive and systematic study of minority-carrier lifetime and recombination mechanisms in $p\ensuremath{-}\mathrm{InP}$ single crystals. The study is based on steady state and time-resolved photoluminescence measurements at a wide temperature range (15--300 K). Possible recombination mechanisms are analyzed and compared in order to assess their influence on the free electron lifetime. It was found that nonradiative recombination at Zn-induced neutral acceptor centers is responsible for the short minority-carrier lifetime in this crystal down to a temperature of around 30 K. At lower temperatures three main processes determine the lifetime: radiative band-to-band recombination, radiative recombination in the deep acceptor level, and trapping at the shallow unintentional donor impurity centers.
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